2SC5748 2001-11-27 1 toshiba transistor silicon npn triple diffused mesa type 2SC5748 horizontal deflection output for hdtv&digital tv. high voltage: v cbo = 2000 v low saturation voltage: v ce (sat) = 3 v (max) high speed: t f = 0.15 s (typ.) maximum ratings (tc 25c) characteristics symbol rating unit collector-base voltage v cbo 2000 v collector-emitter voltage v ceo 900 v emitter-base voltage v ebo 5 v dc i c 16 collector current pulse i cp 32 a base current i b 8 a collector power dissipation p c 210 w junction temperature t j 150 c storage temperature range t stg 55~150 c electrical characteristics (tc 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb 2000 v, i e 0 1 ma emitter cut-off current i ebo v eb 5 v, i c 0 100 a collector-emitter breakdown voltage v (br) ceo i c 10 ma, i b 0 900 v h fe (1) v ce 5 v, i c 2 a 20 55 h fe (2) v ce 5 v, i c 8 a 7 12.5 dc current gain h fe (3) v ce 5 v, i c 12 a 4.8 7.5 collector-emitter saturation voltage v ce (sat) i c 12 a, i b 3 a 3 v base-emitter saturation voltage v be (sat) i c 12 a, i b 3 a 1.3 v transition frequency f t v ce 10 v, i c 0.1 a 2 mhz collector output capacitance c ob v cb 10 v, i e 0, f 1 mhz 310 pf storage time t stg 4.0 5.0 switching time fall time t f i cp 8 a, i b1 (end) 1.2 a, f h 32 khz 0.15 0.35 s unit: mm jedec D jeita D toshiba 2-21f2a weight: 9.75 g (typ.)
2SC5748 2001-11-27 2 collector?emtter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe base?emtter voltage v be (v) i c ? v be collector current i c (a) 300 0.5 0.01 50 0.1 1 10 common emitter v ce 5 v t c 100c 25 25 10 0.03 0.3 3 30 1 3 100 30 20 0 0 10 common emitter tc 25c 4 8 12 16 i b 0.2 4 3.5 2 4 6 8 2.5 3 2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 20 0 0 common emitter v ce 5 v t c 100c 25 25 16 12 8 4 0.2 0.4 0.6 0.8 1 1.2
2SC5748 2001-11-27 3 base current i b (a) v ce ? i b collector emitter voltage v ce (v) collector current i c (a) v ce (sat) ? i c collector emitter saturation voltage v ce (sat) (v) base current i b (a) v ce ? i b collector emitter voltage v ce (v) collector current i c (a) collector emitter saturation voltage v ce (sat) (v) base current i b (a) v ce ? i b collector emitter voltage v ce (v) collector current i c (a) v ce (sat) ? i c collector emitter saturation voltage v ce (sat) (v) v ce (sat) ? i c 0.05 0.2 common emitter tc 25c 1 10 3 100 30 5 50 0.1 0.3 0.5 1 3 5 10 i c /i b 4 10 8 6 0 0 7 i c 12 a 0.8 1.6 2.4 3.2 4 2 4 6 8 10 8 9 10 11 common emitter tc 25c 0 0 0.8 1.6 2.4 3.2 4 2 4 6 8 10 common emitter tc 25c 7 i c 12 a 8 9 10 11 0 0 common emitter tc 100c 0.8 1.6 2.4 3.2 4 2 4 6 8 10 7 i c 12 a 8 9 10 11 10 0.05 1 10 3 100 30 5 50 0.1 0.3 0.5 1 3 5 common emitter tc 100c 0.2 i c /i b 4 10 8 6 10 0.05 1 10 3 100 30 5 50 0.1 0.3 0.5 1 3 5 common emitter tc 25c 0.2 i c /i b 4 10 8 6
2SC5748 2001-11-27 4 collector-emitter voltage v ce (v) safe operating area collector current i c (a) case temperature tc (c) p c ? tc collector power dissipation p c (w) r th (j-c) ? t w pulse width t w (s) transient thermal impedance (junction-case) r th (j-c) (c/w) tc 25c (infinite heat sink) curves should be applied in thermal limited area. (single nonrepetitive pulse) 10 0.001 10 100 1 m 10 m 1 10 100 1000 100 m 0.01 0.1 1 infinite heat sink 250 0 0 25 50 75 100 125 150 50 100 150 200 175 *: single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. 100 0.01 1 10 100 1000 0.1 1 10 1 ms * dc operation tc 25c i c max (continuous) i c max (pulsed) v ceo max 10 ms * 100 ms * 100 s * 10 s *
2SC5748 2001-11-27 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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